Dopant相关论文
ZnO nanostructures have received broad attention for their novel properties in future nano-electronic and nano-photonic ......
Role of group ⅢA metal ion dopants in photoelectrochemical and photocatalytic properties of Sr0.25H1
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Highly Stable Three-dimensional Metal-Organic Frameworks with Lewis Basicity for Efficient and Stabl
Perovskite solar cells(PSCs)have received attention for their excellent efficiency over the past few years....
Despite varieties of titanium oxo-clusters(TOCs)have been documented,exploring synthetic avenues for the effective synth......
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Effects of doping La and Cu on photoinduced charge properties of TiO2 and its relationships with pho
The pure, 1 mol% only La or only Cu doped TiO2 and La and Cu codoped TiO2 were prepared by a sol-gel process. The effect......
Photoluminescence properties and effect of Bi~(3+) dopant of Eu~(3+) and Dy~(3+) co-doped Sr_3V_2O_8
Photoluminescence properties of Sr 2.5 Dy 1/3-x Eu x V 2 O 8(x=0,0.06,0.12,0.18,0.24,0.33) were investigated.The excitat......
Structure and electronic structure of S-doped graphitic C_3N_4 investigated by density functional th
The structures of the heptazine-based graphitic C3N4 and the S-doped graphitic C3N4 are investigated by using the densit......
Sr-doped La2Mo2O9 were prepared by solid state reaction and characterized by XRD,impedance spectroscopy and HebbWagner p......
Europium-doped graphitic carbon nitride was synthesized by an easy method and characterized by X-ray diffraction(XRD),ul......
Influences of Mg~(2+) ion on dopant occupancy and upconversion luminescence of Ho~(3+) ion in LiNbO_
The effects of a Mg2+ ion on the dopant occupancy and upconversion luminescence of a Ho3+ ion in LiNbO3 crystal are repo......
Absolute quantum yield(Φ) is one of the most important parameters to evaluate the potential of novel materials.Lanthani......
Polymer light-emitting devices based on europium(Ⅲ) complex with 11-bromo-dipyrido[3,2-a:2′,3′-c]phe
Polymer light-emitting diodes(PLEDs) containing Eu(DBM)3(Br DPPz)(DBM is dibenzoylmethane, and Br DPPz is 11- bromo-dipy......
Copper-doped Zn S(Zn S:Cu) nanocrystals are synthesized by the sol–gel method.The average size of the Zn S:Cu nanocryst......
A metal-free photocatalytic hydrogen evolution system was successfully fabricated using heteroatom doped graphene materi......
Effect of dopant concentration on the spectra characteristic in Zr~(4+) doped Yb:Nd:LiNbO_3 crystals
A series of Yb:Nd:LiNbO_3 crystals tridoped with various concentrations of Zr~(4+)(1 mol.%, 2 mol.% and 4 mol.%) were gr......
The PtCl_4 and H_2PtCl_6·6H_2O doped polyacetylene were studied by X-ray photoelectronspectroscopy and transmission el......
The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4×100mm multi-wafer product......
Semi-insulating(SI)GaAs doped with indium has been grown and characterized.The relationship between the dislocationdens......
The post-silicide of dopant segregation process for adjusting NiSi/n-Si SBH(Schottky barrier height)is described.Adoptin......
The numerical study on the performance of large-mode-area (LMA) fibers coiled onto a spool in high power amplifier is ca......
Heavy doping of the base in HBTs brings about a bandgap narrowing (BGN) effect, which modifies the intrinsic carrier den......
Electronic Structure and Optical Properties of Zinc-Blende In_xGa_(1-x)N_yAs_(1-y) by a First-Princi
Electronic structure and optical properties of the zinc-blende In_xGa_(1-x)N_yAs_(1-y) system are calculated fromthe fi......
By means of analyzing theⅠ-Ⅴcharacteristic curve of NiSi/n-Si Schottkyjunction diodes(NiSi/n-Si SJDs), abstracting the......
A process simplification scheme for fabricating CMOS poly-Si thin-film transistors(TFTs) has been proposed, which employ......
We use extended Huckel methods of molecular orbitds and crystal orbitals (EHMO/CO) to calculate the two-dimensional band......
After post-silicidation annealing at various temperatures for 30 min,abnormal oxidation and agglomeration in nickel sili......
In this paper,we demonstrate that controlled dopant-concentration is an essential issue for charge carriers transporting......
The effect of δ-doping and modulation-doping on Si-doped high Al content n-Al_xGa_(1-x)N grown by MO
The effect of periodic delta-doping and modulation-doping on high Al content n-Al_xGa_(1-x)N(x = 0.55) epilayers grown b......
First-principles calculations were performed to investigate the magnetic properties of Zn(Mn,Li)O based on the Perdew-Bu......
Fluoride nanoparticles of Ln3+(Ln3+=Pr3+,Nd3+,Sm3+,Gd3+,Tb3+Dy3+,Ho3+,Er3+,Tm3+,Yb3+)/Eu3+:LaOF and Eu3+ :LaOF with rhom......
A thin film electroluminescence cell with the structure of ITO /PPV /PVK∶Eu(TTA)_4C_5H_5NC_(16)H_(33)∶PBD /Alq 3 ......
Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers
The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) AlN interlaye......
Effects of interaction between defects on the uniformity of doping HfO_2-based RRAM:a first principl
The physical mechanism of doping effects on switching uniformity and operation voltage in Al-doped HfO_2 resistive rando......
The importance of substrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide(ES-UB-MOSFETs......
Copper doped n-type single-crystal silicon materials are prepared by a high temperature diffusion process. The electrica......
High-performance germanium n~+/p junction by nickel-induced dopant activation of implanted phosphoru
High-performance Ge n~+/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal(nick......
Red phosphorescent organic light-emitting diodes based on a novel host material with thermally activ
High cost of phosphors and significant efficiency roll-off at high brightness are the two main factors that limit the wi......
The electroluminescent characteristics of blue organic light-emitting diodes(BOLEDs) fabricated with doped charge carrie......
Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitt
The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes(......
To design a compact erbium-doped fiber laser, a high-concentration erbium-doped fiber(EDF) is needed. However, increasin......
Effect of various red phosphorescent dopants in single emissive white phosphorescent organic light-e
In order to realize single emissive white phosphorescent organic light-emitting devices(PHOLEDs) with three color phosph......
Theoretical Analysis of Er~(3+)-Doped Telluride Glass Fiber Amplifier for 2.700μm Laser Amplificatio
The rate equations and power evolution equations of erbium-doped telluride glass fiber amplifier for both 1.530 and 2.70......
One-Pot Synthesis of Tetraarylpyrrolo[3,2-b]pyrrole Dopant-Free Hole-Transport Materials for Inverte
Four organic small-molecule hole transport materials (D41,D42,D43 and D44) of tetraarylpyrrolo[3,2-b]pyrroles were pre-p......
A series of Ce-doped Ni-B amorphous alloy catalysts were prepared by a KBH_4 reduction method, characterized by ICP, BET......
Ce0.6Zr0.3RE0.1O2(RE = Y, La, Pr, Tb)solid solutions were prepared by co-precipitation technique and characterized by a ......
Doping of ZnO nanostructures was investigated by using a low temperature electrochemical process. Various dopant materia......
Fe-doped In_2O_3 dilute magnetic semiconducting nanowires are fabricated on Au-deposited Si substrates by the chemical v......
Polyacetylene films were doped with FeCl3 and implanted with 30 k’eV K+ ions. Physical changes to the films were exami......
